Infrared detector, method of manufacturing the same, and optical interconnection structure including the infrared detector

An optical interconnection structure comprising:

• a waveguide;
• and
• an infrared detector connected to the waveguide,
• wherein the infrared detector comprises:
• an infrared absorption layer in contact with the waveguide and provided to absorb short-wavelength infrared rays;
• and
• a first electrode layer and a second electrode layer connected to the infrared absorption layer and spaced apart from each other, and
• wherein the infrared absorption layer comprises:
• a metal nanostructure embedded in a center of the infrared absorption layer and positioned to correspond to a mode period of incident light transmitted through the waveguide;
• and
• a light reflection layer provided at an end portion of the infrared absorption layer.

A method of manufacturing an infrared detector, the method comprising:

• forming a first infrared absorption layer by using an epitaxy method in a region of a substrate;
• forming a metal nanostructure on the first infrared absorption layer;
• forming a second infrared absorption layer on the first infrared absorption layer to completely cover the metal nanostructure;
• and
• forming a first electrode layer and a second electrode layer to be connected to at least the second infrared absorption layer,
• wherein the metal nanostructure is positioned corresponding to a mode period of incident light, and
• wherein the second infrared absorption layer is formed by using a non-growth method.