Fabrication of graphene-based electrodes with ultra-short channel
OwnerAriel ISMACH, Kamalakannan RANGANATHAN +2inventors
InventorsAriel ISMACH, Kamalakannan RANGANATHAN, Assael COHEN, Pranab Kishore MOHAPATRA
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Abstract
The technology disclosed herein concerns a process for fabricating devices with Graphene Nanogap Electrodes (GNE).
Claims21
1-60. (canceled)
A process for fabricating a device comprising an ultra-short gap between a pair of electrodes, each electrode comprising or consisting of a single-layer or a few-layer graphene, the process comprising forming a lateral channel in a graphene strip being a single-layer or a few-layer graphene strip, wherein the channel is formed by a nanomaterial-induced catalytic etching.
A short channel transistor device comprising a source electrode and a drain electrode, each of the source and drain electrodes comprising or consisting of a single-layer or a few-layer graphene;
- an etched nanogap disposed between the electrodes having a width ranging between 1 nm and 100 nm and comprising an active material.
Dependencies are inferred from the claim text.