Method for manufacturing a diode radiation sensor

An execution method of a diode radiation sensor having at least one charge multiplication diode, said method comprising the following steps:

• arranging a substrate made of a semiconductor material, said substrate having a front surface and a rear surface opposite said front surface;
• making, at least near adjacently to said front surface of said substrate, at least a first layer of the semiconductor material having a first type of doping;
• and
• making, in an interior of said substrate, a second layer of the semiconductor material having a second type of doping that is electrically opposite to said first type of doping,
• wherein said second layer is obtained by inserting, in a zone of said substrate where said second layer is to be located, a first predetermined amount of a first dopant of said first type and a second predetermined amount of a second dopant of said second type, and
• wherein said second type of doping is obtained by differential between effects of said inserting said first predetermined amount of said first dopant and said second predetermined amount of said second dopant so as to be able to increase at will said second predetermined amount of said second dopant, thereby mitigating effects, at least on said second type of doping, of radiation striking said second layer.