Solid-state imaging element, manufacturing method, and electronic device

A method of manufacturing a solid-state imaging element, the method comprising:

• bonding a second semiconductor substrate to a first semiconductor substrate provided with a photodiode and some pixel transistors for each pixel, the second semiconductor substrate being provided with another pixel transistor other than the some pixel transistors constituting the pixel;
• stacking an interlayer film on a surface of the second semiconductor substrate via an insulating film, the surface being opposite to a surface on a side to which the first semiconductor substrate is bonded;
• and
• forming a through electrode that penetrates the second semiconductor substrate from the interlayer film side and is electrically connected to the first semiconductor substrate,
• wherein the through electrode includes a lower electrode provided from substantially the same height as a surface of the second semiconductor substrate on the interlayer film side toward the second semiconductor substrate, and an upper electrode penetrating the interlayer film and connected to the lower electrode.

An electronic device including a solid-state imaging element, the solid-state imaging element comprising:

• a first semiconductor substrate provided with a photodiode and some pixel transistors for each pixel;
• a second semiconductor substrate bonded to the first semiconductor substrate and provided with another pixel transistor other than the some pixel transistors constituting the pixel;
• an interlayer film stacked on a surface of the second semiconductor substrate via an insulating film, the surface being opposite to a surface on a side to which the first semiconductor substrate is bonded;
• and
• a through electrode that penetrates the second semiconductor substrate from the interlayer film side and is electrically connected to the first semiconductor substrate,
• wherein the through electrode includes a lower electrode provided from substantially the same height as a surface of the second semiconductor substrate on the interlayer film side toward the second semiconductor substrate, and an upper electrode penetrating the interlayer film and connected to the lower electrode.