Solid-state imaging element, and method for manufacturing solid-state imaging element

A solid-state imaging element comprising:

• a semiconductor substrate;
• a first element unit formed on the semiconductor substrate;
• and
• a second element unit formed on the semiconductor substrate, wherein
• the first element unit includes a light receiving part configured to generate charges in response to incidence of light, and a transfer part configured to transfer the charges,
• the second element unit is configured to perform at least one of transmission of a signal to the first element unit and reception of a signal from the first element unit, and includes at least one capacitance part,
• the transfer part includes
• a first transfer electrode and a second transfer electrode that are aligned in a transfer direction of the charges, and
• a first insulating layer configured to insulate the first transfer electrode and the second transfer electrode from each other,
• the at least one capacitance part includes
• a first capacitance electrode and a second capacitance electrode that overlap each other as viewed from a thickness direction of the semiconductor substrate, and
• a second insulating layer configured to insulate the first capacitance electrode and the second capacitance electrode from each other,
• as viewed from the thickness direction of the semiconductor substrate, a part of the first transfer electrode overlaps a part of the second transfer electrode,
• the first insulating layer includes a first portion positioned between the part of the first transfer electrode and the part of the second transfer electrode,
• the second insulating layer includes a second portion positioned between the first capacitance electrode and the second capacitance electrode, and
• a thickness of the first portion of the first insulating layer is larger than a thickness of the second portion of the second insulating layer.