Image sensor

An image sensor comprising a plurality of pixels formed in and on a semiconductor substrate, each pixel including:

• at least one first photosensitive region formed in the semiconductor substrate, and adapted to collect light in a first range of wavelengths;
• a second photosensitive region formed in the semiconductor substrate in line with said at least one first photosensitive region, and adapted to collect light in a second range of wavelengths, different from the first range of wavelengths;
• at least one charge collection area disposed on the of the substrate opposite to said at least one first photosensitive area;
• a peripheral isolating trench extending vertically into the semiconductor substrate, from said side of the second photosensitive area, and laterally delimiting said at least one first photosensitive area and the second photosensitive area;
• at least one transfer region extending from said at least one first photosensitive area to said at least one charge collection area;
• and
• at least one transfer gate extending vertically between said at least one transfer region and the second photosensitive area, and laterally bordering said at least one transfer region,
• wherein each transfer gate is bordered by intern sidewalls of the peripheral isolating trench and transfer gate.