Low temperature plasma treatment based metal transfer method and high-quality source-drain formation method

Abstract

Disclosed are low-plasma treatment-based metal transfer technology, high-quality source-drain formation technology, and a method of manufacturing a semiconductor device using the same. The method of manufacturing the semiconductor device includes preparing an oxide substrate, sequentially depositing a contact metal, Ti, and Au on the oxide substrate, performing plasma treatment on the oxide substrate on which the contact metal, the Ti, and the Au are deposited, attaching an organic film on the oxide substrate on which the contact metal, the Ti, and the Au are deposited, and removing oxide of the oxide substrate.

Dependencies are inferred from the claim text.