Back to results
US 2025/0160001 A1Published application
Low temperature etch-based metal transfer method and high-quality source-drain formation method
AssigneeKorea University Research and Business Foundation
InventorsHyun-Yong YU, Kyu Hyun HAN
Life of this patent
Estimating the term…
Abstract
Disclosed are low-temperature etching-based metal transfer technology, high-quality source-drain formation technology, and a method of manufacturing a semiconductor device using the same. The method of manufacturing the semiconductor device includes preparing an oxide substrate, sequentially depositing a contact metal, Ti, and Au on the oxide substrate, attaching an organic film on the oxide substrate on which the contact metal, Ti, and Au are deposited, and removing oxide of the oxide substrate.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- preparing an oxide substrate;
- sequentially depositing a contact metal, Ti, and Au on the oxide substrate;
- attaching an organic film on the oxide substrate on which the contact metal, the Ti, and the Au are deposited;
- and
- removing oxide of the oxide substrate.
2 more elements
Dependencies are inferred from the claim text.