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US 2025/0159999 A1Published application
Silicon control rectifier integrated with a transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsAnindya Nath, Uppili S. Raghunathan, Rajendran Krishnasamy, Sagar Premnath Karalkar, Alexander M. Derrickson, Vibhor Jain
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a silicon control rectifier (SCR) and methods of manufacture. The structure includes: a doped region in a semiconductor substrate; at least two regions of semiconductor material comprising opposite doping types over the doped region; and polysilicon regions over respective ones of the least two regions of semiconductor material.
Claims20
A structure comprising:
- a doped region in a semiconductor substrate;
- at least two regions of semiconductor material comprising opposite doping types over the doped region;
- and
- polysilicon regions over respective ones of the least two regions of semiconductor material.
1 more element
A structure comprising:
- a first doped region of a first dopant type in a semiconductor substrate;
- a first semiconductor layer over the first doped region and have a first dopant type;
- a second semiconductor layer over the first doped region and have a second dopant type, opposite to the first dopant type;
- and
- polysilicon regions contacting the first semiconductor layer and the second semiconductor layer.
2 more elements
A method comprising:
- forming a doped region in a semiconductor substrate;
- forming at least two regions of semiconductor material comprising opposite doping types over the doped region;
- and
- forming polysilicon regions over respective ones of the least two regions of semiconductor material.
1 more element
Dependencies are inferred from the claim text.