Rf front-end chip, manufacturing method thereof, circuit structure and rf communication device
AssigneeHangzhou Geo-chip Technology Co., Ltd.
InventorRuili WU
Life of this patent
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Abstract
The present disclosure provides a radio frequency (RF) front-end chip, a circuit structure and an RF communication apparatus, where the RF front-end chip includes at least one substrate, and an RF power amplifier (PA) chip integrating therein based on a CMOS process at least an RF PA circuit, a control logic circuit, and optionally a switching circuit, where the RF PA chip is mounted on the at least one substrate based on a SOI process. With the above chip, chip integration can be improved at a low cost.
Claims20
A radio frequency (RF) front-end chip, comprising:
- an RF power amplifier (PA) chip integrating therein, based on a Complementary Metal-Oxide-Semiconductor (CMOS) process, at least an RF PA circuit, and a control logic circuit, and optionally a switching circuit;
- and
- at least one substrate, on which the RF PA chip is mounted based on a Silicon-On-Insulator (SOI) process.
A method of manufacturing a radio frequency (RF) front-end chip, comprising:
- preparing an RF power amplifier (PA) chip integrating therein, based on a Complementary Metal-Oxide-Semiconductor (CMOS) process, at least an RF PA circuit, and a control logic circuit, and optionally a switching circuit;
- and
- mounting the RF PA chip on at least one substrate based on a Silicon-On-Insulator (SOI) process.
Dependencies are inferred from the claim text.