Semiconductor structure and method of forming the same

A semiconductor structure, comprising:

• an active layer, having a plurality of active regions, a front side and a back side, the back side corresponding to the front side;
• a plurality of metal pillars, disposed on the back side of the active layer, and electrically connected to the active regions;
• a first backside power line, disposed on a first group of the metal pillars, and extending along a first axis;
• a second backside power line, disposed on a second group of the metal pillars, and extending along the first axis;
• an inner metal line, disposed aside the metal pillars, electrically connected to the metal pillars and extending along the first axis, wherein the inner metal line is divided into a plurality of inner metal sections;
• a first isolation cap, disposed between the first backside power line and a first metal pillar of the first group of the metal pillars;
• and
• a second isolation cap, disposed between the second backside power line and a second metal pillar of the second group of the metal pillars,
• wherein a first inner metal section of the inner metal line is in contact with and disposed between the first metal pillar and a third metal pillar of the second group of the metal pillars, and a second inner metal section of the inner metal line is in contact with and disposed between the second metal pillar and a fourth metal pillar of the first group of the metal pillars.

A method for manufacturing a semiconductor structure, comprising:

• forming an active layer, wherein the active layer has a plurality of active regions, a front side and a back side, the back side corresponding to the front side;
• forming a plurality of metal pillars on the back side of the active layer to physically contact the active regions exposed on the back side of the active layer;
• forming a first backside power line on a first group of the metal pillars comprising a first metal pillar;
• forming a second backside power line on a second group of the metal pillars comprising a second metal pillar, wherein the first and second backside power lines extend along a first axis;
• forming an inner metal line between the first metal pillar and the second metal pillar, wherein the inner metal line is in contact with the first and second metal pillars, and extends along the first axis;
• and
• forming an isolation cap between the first backside power line and the first metal pillar.