Semiconductor device including contact structures having different dimensions

A semiconductor device comprising:

• a 1st channel structure;
• a 1st source/drain region and a 2nd source/drain region connected through the 1st channel structure in a 1st direction;
• a 1st gate structure on the 1st channel structure;
• a 1st contact structure on the 1st source/drain region and connecting the 1st source/drain region to a voltage source;
• and
• a 2nd contact structure on the 2nd source/drain region and connecting the 2nd source/drain region to another circuit element other than a voltage source,
• wherein a 1st contact length between the 1st contact structure and the 1st source/drain region is greater than a 2nd contact length between the 2nd contact structure and the 2nd source/drain region in the 1st direction.

A semiconductor device comprising:

• a 1st channel structure;
• and
• a 1st source/drain region and a 2nd source/drain region connected through the 1st channel structure in a 1st direction;
• a 1st gate structure on the 1st channel structure;
• a 1st contact structure on the 1st source/drain region and connecting the 1st source/drain region to a voltage source;
• and
• a 2nd contact structure on the 2nd source/drain region and connecting the 2nd source/drain region to another circuit element other than one or more voltage sources,
• wherein a 1st contact height between the 1st contact structure and the 1st source/drain region is greater than a 2nd contact height between the 2nd contact structure and the 2nd source/drain region in a 3rd direction.