Method of producing a device with superimposed transistors
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorSylvain BARRAUD
Life of this patent
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Abstract
A device comprising two transistors stacked along a main direction, the first transistor comprising channels stacked along the main direction and first source and drain contacts, the second transistor comprising channels stacked along the main direction and second source and drain contacts, wherein the first source (respectively drain) contact and the second source (respectively drain) contact are distinct and isolated from one another by a first gate dielectric layer and by a second gate dielectric layer. The invention also relates to a method for manufacturing the device.
Claims16
A microelectronic device comprising at least two superposed transistors along a main direction, the device comprising:
- a first transistor, including
- at least two first channels stacked along the main direction, each channel being with a basis of a first semiconductor material,
- a first source and a first drain with the basis of said first semiconductor material,
- a first source contact and a first drain contact connected respectively to said first source and to said first drain,
- a first so-called gate-all-around, totally surrounding at least one of the first channels, and
- a first gate dielectric layer separating each first channel from the first gate-all-around, and
- a second transistor, including
- at least two second channels stacked along the main direction, each channel being with a basis of a second semiconductor material,
- a second source and a second drain with the basis of said second semiconductor material,
- a second source contact and a second drain contact connected respectively to said second source and to said second drain,
- a second so called gate-all-around, totally surrounding at least one of the second channels,
- a second gate dielectric layer separating each second channel of the second gate-all-around,
- wherein the first source contact and one from among the second source contact and the second drain contact are distinct and isolated from one another by the first gate dielectric layer and by the second gate dielectric layer, and in that the first drain contact and the other from among the second source contact and the second drain contact are distinct and isolated from one another by said first gate dielectric layer and by said second gate dielectric layer.
Dependencies are inferred from the claim text.