Semiconductor device and method

A device comprising:

• a semiconductor fin comprising a first doped region laterally between a second doped region and a third doped region, wherein the first doped region has a different doping type than the second doped region and the third doped region;
• a first epitaxial region on the first doped region and the second doped region;
• a second epitaxial region on the first doped region and the third doped region;
• a third epitaxial region on the first doped region, wherein the third epitaxial region is laterally between the first epitaxial region and the second epitaxial region;
• a first contact on the third epitaxial region, wherein the second epitaxial region and the third epitaxial region are free of contacts;
• a first gate structure on the first doped region, wherein the first gate structure is laterally between the first epitaxial region and the third epitaxial region;
• and
• a second gate structure on the first doped region, wherein the second gate structure is laterally between the second epitaxial region and the third epitaxial region.

A method comprising:

• implanting a semiconductor fin to form a first doped region adjacent a second doped region;
• forming a first transistor comprising:
• forming a first epitaxial region and a second epitaxial region in the first doped region;
• forming a first gate structure between the first epitaxial region and the second epitaxial region;
• and
• forming a first contact on the first gate structure;
• forming a first passive resistor comprising:
• forming a third epitaxial region in the second doped region;
• and
• forming a second gate structure between the third epitaxial region and the second epitaxial region;
• and
• forming a first active resistor comprising:
• forming a fourth epitaxial region in the second doped region;
• forming a third gate structure between the third epitaxial region and the fourth epitaxial region;
• and
• forming a second contact on the third gate structure.