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US 2025/0159967 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Li CHIU, Hong-Chih CHEN, Chia-Hao KUO, Fu-Hsiang SU, Shih-Hsun CHANG
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Abstract
A semiconductor device includes a plurality of active components and an isolation component. Each active component includes a plurality of active channel sheets vertically stacked and a metal gate. The isolation component isolates the adjacent two of the active components, and includes a plug structure. The plug structure is formed of a material the same as that of the metal gate.
Claims20
A semiconductor device, comprising:
- a plurality of active components, wherein each active component comprises a plurality of active channel sheets vertically stacked and a metal gate;
- and
- an isolation component isolating the adjacent two of the active components, and comprising a plug structure;
- wherein the plug structure is formed of a material the same as that of the metal gate.
1 more element
A semiconductor device, comprising:
- a plurality of active components, wherein each active component comprises a plurality of active channel sheets vertically stacked and a metal gate;
- an isolation hole isolating the adjacent two of the active components;
- and
- an isolation component formed within the isolation hole and comprising:
- a dielectric structure formed on a sidewall of the isolation hole;
- and
- a plug structure formed on the dielectric structure;
- wherein the plug structure is formed of a material different from that of the dielectric structure.
5 more elements
A manufacturing method for a semiconductor device, comprising:
- forming a plurality of active components on a substrate, wherein each active component comprises a plurality of active channel sheets vertically stacked;
- forming an isolation hole to isolate the adjacent two of the active components;
- forming a dielectric structure of an isolation component within the isolation hole;
- forming a plug structure of the isolation component within the isolation hole;
- and
- forming a metal gate on the corresponding active component;
- wherein the plug structure is formed of a material the same as that of the metal gate.
4 more elements
Dependencies are inferred from the claim text.