Method of manufacturing semiconductor devices with multiple silicide regions

A semiconductor device comprising:

• a first silicide material in physical contact with both a first source/drain region and a conductive contact;
• a segregated second silicide material in physical contact with a second source/drain region;
• and
• a third silicide material in physical contact with the segregated second silicide material and the conductive contact, the third silicide material comprising each element of the first silicide material as well as additional elements.

A semiconductor device comprising:

• a first stack of materials over a first semiconductor fin, the first stack of materials comprising:
• a first semiconductor material;
• a first conductive contact;
• and
• a first silicide extending between the first semiconductor material and the first conductive contact, the first silicide comprising a first set of elements;
• and
• a second stack of materials over a second semiconductor fin, the second stack of materials comprising:
• a second semiconductor material;
• the first conductive contact;
• a segregated second silicide in physical contact with the second semiconductor material, the segregated second silicide comprising a first element;
• and
• a third silicide in physical contact with the first conductive contact, the third silicide comprising the first set of elements and the first element.