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US 2025/0159964 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsYi-Fan Li, Wen-Yen Huang, Shih-Min Chou, Zhen Wu, Nien-Ting Ho, Chih-Chiang Wu, Ti-Bin Chen
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Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.
Claims7
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region, wherein the first region comprises a PMOS region and the second region comprises a NMOS region;
- forming a first bottom barrier metal (BBM) layer on the first region and the second region;
- forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region;
- forming a diffusion barrier layer on the first WFM layer;
- and
- removing the diffusion barrier layer and the first WFM layer on the second region.
3 more elements
Dependencies are inferred from the claim text.