US 2025/0159961 A1Published application

Semiconductor device

AssigneeFuji Electric Co., Ltd.

InventorNaoki KUMAGAI

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Abstract

A semiconductor device includes, on a semiconductor substrate of a first conductivity type, an active region through which a main current flows, a terminal region surrounding a periphery of the active region, and an intermediate region between the active region and the terminal region. The semiconductor device has, in the active region, a front electrode disposed on a first main surface of the semiconductor substrate and connected to a first semiconductor region of a second conductivity type. In the intermediate region, the semiconductor device has a source ring electrically connected to the front electrode and to a second semiconductor region of the second conductivity type for extracting hole current. A contact between the front electrode in the active region and the first semiconductor region is an ohmic contact. A contact between the source ring in the intermediate region and the second semiconductor region includes a Schottky junction or a heterojunction.

Claims12

Dependent claims

A semiconductor device comprising:

a semiconductor substrate of a first conductivity type, the semiconductor substrate having
an active region through which a main current flows,
a terminal region surrounding a periphery of the active region in a top view of the semiconductor substrate, and
an intermediate region between the active region and the terminal region,
the semiconductor substrate having a first main surface and a second main surface opposite to each other;
a front electrode provided in the active region, on the first main surface of the semiconductor substrate;
a first semiconductor region of a second conductivity type formed in the semiconductor substrate, and being connected to the front electrode;
a second semiconductor region of the second conductivity type formed in the semiconductor substrate, for extracting hole current;
and
a source ring provided in the intermediate region, the source ring being electrically connected to the front electrode and connected to the second semiconductor region, wherein
a contact between the front electrode in the active region and the first semiconductor region is an ohmic contact, and
a contact between the source ring in the intermediate region and the second semiconductor region includes a Schottky junction or a heterojunction.

9 more elements

A semiconductor device comprising:

a semiconductor substrate of a first conductivity type, the semiconductor substrate having
an active region through which a main current flows,
a terminal region surrounding a periphery of the active region in a top view of the semiconductor substrate, and
an intermediate region between the active region and the terminal region,
the semiconductor substrate having a first main surface and a second main surface opposite to each other;
a front electrode provided in the active region, on the first main surface of the semiconductor substrate;
a first semiconductor region of a second conductivity type formed in the semiconductor substrate, and being connected to the front electrode;
a second semiconductor region of the second conductivity type formed in the semiconductor substrate, for extracting hole current;
and
a source ring provided in the intermediate region, the source ring being electrically connected to the front electrode and connected to the second semiconductor region, wherein
a contact resistance between the source ring and the second semiconductor region is greater than a contact resistance between the front electrode of the active region and the first semiconductor region.

8 more elements

Dependencies are inferred from the claim text.