Iii-nitride transistor with high n doping in access region
AssigneeFinwave Semiconductor, Inc.
InventorsDongfei Pei, Bin Lu, Hal Emmer, Mark Dipsey
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Abstract
A new transistor structure for use with III-Nitride semiconductor structures is disclosed. The transistor includes heavily doped n++ layers located in the source region and the drain region. The source and drain electrodes are disposed on their respective heavily doped n++ layer. Further, in some embodiments, a portion of the gate electrode may be disposed on one or both of the heavily doped n++ regions. These regions improve the on-resistance of the transistor, especially for low voltage applications.
Claims20
A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising:
- a channel layer;
- a barrier layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
- a source electrode disposed in a source region and a drain electrode disposed in a drain region;
- a gate electrode disposed between the source electrode and the drain electrode in a gate region;
- a cap layer disposed between at least a portion of the gate electrode and the barrier layer;
- and
- heavily doped n++ layers disposed on either side of the cap layer;
- wherein the source electrode and the drain electrode each contact at least a portion of a respective heavily doped n++ layer.
A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising:
- a channel layer;
- a barrier layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
- a source electrode disposed in a source region and a drain electrode disposed in a drain region;
- a cap layer disposed on top of the barrier layer in a gate region;
- a gate recess disposed between the source electrode and the drain electrode in the gate region, passing through cap layer;
- a gate electrode disposed in the gate recess;
- and
- heavily doped n++ layers disposed on either side of the cap layer;
- wherein the source electrode and the drain electrode each contact at least a portion of a respective heavily doped n++ layer.
Dependencies are inferred from the claim text.