Nitride structure and semiconductor device

Abstract

According to one embodiment, a nitride structure includes a stacked body. The stacked body includes a base including silicon, a first nitride region including AlN, and a second nitride region including Alz2Ga1-z2N (0≤z2<1). The first nitride region is provided between the base and the second nitride region in a first direction. The stacked body includes a first interface region including a first interface between the base and the first nitride region. The first interface region includes a first peak position in the first direction. A chlorine concentration profile along the first direction in the stacked body has a chlorine peak value at the first peak position.

Dependencies are inferred from the claim text.