Back to results
US 2025/0159955 A1Published application
Method for manufacturing a quantum electronic circuit with a reduced gate pitch
AssigneeCommissariat A L' Energie Atomique Et Aux Energies Alternatives
InventorHeimanu NIEBOJEWSKI
Life of this patent
Estimating the term…
Abstract
A method for manufacturing an electronic circuit includes forming first electrodes distributed at a constant pitch; forming spacers against the first electrodes; forming a second electrode between two neighbouring spacers; and replacing each spacer with a third electrode. The first, second and third electrodes are thus distributed at an average pitch equal to R/4.
Claims15
A method for manufacturing an electronic circuit from a substrate, comprising:
- forming, on the substrate, first gate electrodes spaced apart from each other, each first gate electrode having a first branch extending in parallel to a first direction, the first branches of the first gate electrodes being distributed at a constant pitch, measured along a second direction perpendicular to the first direction;
- forming spacers against the first gate electrodes;
- forming, on the substrate, second gate electrodes, each second gate electrode being disposed between two neighbouring first gate electrodes and separated from each of them by one of the spacers, each second gate electrode having a first branch extending between the two first branches of the neighbouring first gate electrodes;
- and
- forming, as a replacement of the spacers, third gate electrodes, each third gate electrode being disposed between a first gate electrode and second gate electrode which are neighbouring, each third gate electrode having a first branch extending between a first branch of a first gate electrode and a first branch of a second gate electrode.
2 more elements
An electronic circuit comprising, on a substrate:
- first gate electrodes spaced apart from each other, each first gate electrode having a first branch extending in parallel to a first direction, the first branches of the first gate electrodes being distributed at a constant pitch R, measured along a second direction perpendicular to the first direction;
- second gate electrodes, each second gate electrode being disposed between two neighbouring first gate electrodes, each second gate electrode having a first branch extending between the two first branches of the neighbouring first gate electrodes,
- third gate electrodes, each third gate electrode being disposed between a first gate electrode and second gate electrode which are neighbouring, each third gate electrode having a first branch extending between a first branch of a first gate electrode and a first branch of a second gate electrode, wherein the first, second and third gate electrodes are distributed at an average pitch, measured along the second direction, equal to R/4, at least two gate electrodes among the first gate electrodes or at least two gate electrodes among the second gate electrodes or at least two gate electrodes among the third gate electrodes both having a contact independent from one another.
Dependencies are inferred from the claim text.