Semiconductor device

A semiconductor device comprising:

• an active pattern located on a substrate, the active pattern spaced apart from other active patterns in a first direction and extending in a second direction different from the first direction;
• source/drain patterns located on the active pattern and each source/drain pattern spaced apart from one another in the second direction;
• a channel pattern located between a first source/drain pattern and a second source/drain pattern of the source/drain patterns;
• a gate pattern extending between the first source/drain pattern and the second source/drain pattern in the first direction and surrounding at least a portion of the channel pattern;
• and
• an isolation structure extending in the first direction, located outside the source/drain patterns in the second direction, and extending into the active pattern in a third direction that is different from the first and second directions,
• wherein the isolation structure includes insulating patterns stacked in the third direction, an interfacial layer located between the insulating patterns, an insulating liner surrounding the insulating patterns, and an insulating spacer located between the insulating patterns and the insulating liner.

A semiconductor device comprising:

• an active pattern located on a substrate, the active pattern spaced apart from other active patterns in a first direction and extending in a second direction different from the first direction;
• source/drain patterns located on the active pattern and each source/drain pattern spaced apart from one another in the second direction;
• a channel pattern located between a first source/drain pattern and a second source/drain pattern of the source/drain patterns;
• a gate pattern extending between the first source/drain pattern and the second source/drain pattern in the first direction and surrounding at least a portion of the channel pattern;
• and
• an isolation structure extending in the first direction, the isolation structure located outside the source/drain patterns in the second direction, and extending into the active pattern in a third direction that is different from the first and second directions,
• wherein the isolation structure includes an insulating structure having a first portion and a second portion having different contents (atom %) of oxygen (O), carbon (C), or both oxygen (O) and carbon (C), and an insulating liner surrounding the insulating structure.