Split support shield structures for trenched semiconductor devices with integrated schottky diodes

A power semiconductor device, comprising:

• a semiconductor structure comprising a drift region of a first conductivity type;
• a plurality of gate trenches extending in a first direction in the semiconductor structure and spaced apart in a second direction;
• and
• a plurality of support shielding structures of a second conductivity type extending in the first direction in the semiconductor structure and spaced apart from respective sidewalls of the gate trenches in the second direction,
• wherein immediately adjacent pairs of the support shielding structures having one or more of the gate trenches therebetween are spaced apart at a first pitch, and immediately adjacent pairs of the gate trenches having one or more of the support shielding structures therebetween are spaced apart at a second pitch that is different than the first pitch.

A power semiconductor device, comprising:

• a semiconductor structure comprising a drift region of a first conductivity type;
• first and second gate trenches extending in a first direction in the semiconductor structure;
• first and second support shielding structures of a second conductivity type extending in the first direction in the semiconductor structure and spaced apart from sidewalls of the first and second gate trenches;
• and
• a metal contact providing a Schottky barrier with the semiconductor structure between the first and second gate trenches.

A method of fabricating a power semiconductor device, the method comprising:

• providing a semiconductor structure comprising a drift region of a first conductivity type;
• forming a first mask pattern on the semiconductor structure, the first mask pattern comprising respective first openings therein that are spaced apart by a first distance,
• forming support shielding structures of a second conductivity type extending in a first direction in the semiconductor structure using the first openings in the first mask pattern;
• forming a second mask pattern on the semiconductor structure, the second mask pattern comprising respective second openings therein that are spaced apart by a second distance that is different than the first distance;
• and
• forming gate trenches extending in the first direction in the semiconductor structure using the second openings in the second mask pattern, wherein the gate trenches are spaced apart from the support shielding structures.