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US 2025/0159946 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Eun BYUN, Baekwon PARK, Keunwook SHIN, Changhyun KIM, Minsu SEOL, Joungeun YOO, Hyunmi LEE
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Abstract
A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.
Claims20
A semiconductor device comprising:
- a gate electrode;
- a metal nitride layer on the gate electrode:
- a gate insulating film on the metal nitride layer;
- a channel on the gate insulating film;
- a source electrode on one side of the channel;
- and
- a drain electrode on another side of the channel.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- depositing a metal layer on a gate electrode;
- forming a metal nitride layer by reacting nitrogen to the metal layer;
- forming a gate insulating film on the metal nitride layer;
- forming a channel on the gate insulating film;
- and
- forming a source electrode and a drain electrode on opposite sides of the channel.
3 more elements
Dependencies are inferred from the claim text.