Memory Cells and Integrated Assemblies having Charge-Trapping-Material with Trap-Enhancing-Additive

2:

• The memory cell of claim 1 wherein one of the at least three charge-trapping-materials comprises a trap-enhancing-additive.

3:

• The memory cell of claim 2 wherein the trap-enhancing-additive comprises one or more of carbon, phosphorus, boron and metal.

4:

• The memory cell of claim 2 wherein the trap-enhancing-additive comprises at least tungsten.

5:

• The memory cell of claim 1 wherein one of the at least three charge-trapping-materials comprises a trap-enhancing-additive and wherein the other of the at least three charge-trapping-materials comprises no trap-enhancing-additive.

6:

• The memory cell of claim 1 wherein one of the at least three charge-trapping-materials comprises a trap-enhancing-additive and wherein the other of the at least three charge-trapping-materials comprises a lower concentration of the trap-enhancing-additive.

7:

• The memory cell of claim 1 wherein the two trap-enhancing-additives are different trap-enhancing-additives.

8:

• The memory cell of claim 1 wherein each of the at least three charge-trapping-materials comprise a thickness, at least one of the three charge-trapping-materials comprising a different thickness relative to the other two charge-trapping-materials.

9:

• The memory cell of claim 1 wherein each of the at least three charge-trapping-materials comprise a thickness, at least one of the three charge-trapping-materials comprising a thickness ranging from about 10 angstroms to about 100 angstroms.

10:

• The memory cell of claim 1 wherein at least one of the trap-enhancing-additives comprises nitrogen to a concentration within a range of from about 30 atomic percent to about 60 atomic percent.

11:

• The memory cell of claim 1 wherein at least one of the trap-enhancing-additives comprises silicon to a concentration within a range of from about 40 atomic percent to about 45 atomic percent.

14:

• The integrated assembly of claim 12 wherein the first charge-trapping-material comprises trap-enhancing-additive and wherein the third charge-trapping-material comprises no trap-enhancing-additive.

15:

• The integrated assembly of claim 14 wherein the trap-enhancing-additive comprises one or more of carbon, phosphorus, boron and metal.

16:

• The integrated assembly of claim 12 wherein each of the first, second and third charge-trapping-materials comprises the same horizontal cross-section width.

17:

• The integrated assembly of claim 12 wherein the first charge-trapping-material comprises trap-enhancing-additive and wherein the third charge-trapping-material comprises a lower concentration of the trap-enhancing-additive.

18:

• The integrated assembly of claim 17 wherein the trap-enhancing-additive comprises one or more of carbon, phosphorus, boron and metal.

19:

• The memory cell of claim 12 wherein at least two of the first, second and third charge-trapping-materials are spaced from, and not contacting, the tunneling material.

20:

• The memory cell of claim 12 wherein at least one of the first, second and third charge-trapping-materials comprises a trap-enhancing-additive, the trap-enhancing-additive comprises nitrogen to a concentration within a range of from about 30 atomic percent to about 60 atomic percent.