Transistor structures, driving substrates and display panels
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorsSUNG MIN HAN, Jianqin LIN
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Abstract
Disclosed are a transistor structure, a driving substrate and a display panel. The transistor structure includes a substrate, a buffer layer and a transistor, and the buffer layer is disposed on the substrate. The transistor is disposed on a side of the buffer layer away from the substrate. The buffer layer includes a first silicon oxide layer and a second silicon oxide layer stacked on the substrate in sequence. A hydrogen content of the second silicon oxide layer is greater than 4%, and a hydrogen content of the first silicon oxide layer is less than the hydrogen content of the second silicon oxide layer.
Claims20
A transistor structure comprising:
- a substrate;
- a buffer layer disposed on the substrate;
- and
- a transistor disposed on a side of the buffer layer away from the substrate;
- wherein the buffer layer comprises a first silicon oxide layer and a second silicon oxide layer stacked on the substrate in sequence, a hydrogen content of the second silicon oxide layer is greater than 4%, and a hydrogen content of the first silicon oxide layer is less than the hydrogen content of the second silicon oxide layer.
A driving substrate comprising a transistor structure, wherein the transistor structure comprises:
- a substrate;
- a buffer layer disposed on the substrate;
- and
- a transistor disposed on a side of the buffer layer away from the substrate;
- wherein the buffer layer comprises a first silicon oxide layer and a second silicon oxide layer stacked on the substrate in sequence, a hydrogen content of the second silicon oxide layer is greater than 4%, a hydrogen content of the first silicon oxide layer is less than the hydrogen content of the second silicon oxide layer, the hydrogen content of the first silicon oxide layer is less than or equal to 4%, and a refractive index of the second silicon oxide layer is greater than a refractive index of the first silicon oxide layer.
A display panel comprising a driving substrate, wherein the driving substrate comprises a transistor structure, and the transistor structure comprises:
- a substrate;
- a buffer layer disposed on the substrate;
- and
- a transistor disposed on a side of the buffer layer away from the substrate;
- wherein the buffer layer comprises a first silicon oxide layer and a second silicon oxide layer stacked on the substrate in sequence, a hydrogen content of the second silicon oxide layer is greater than 4%, a hydrogen content of the first silicon oxide layer is less than the hydrogen content of the second silicon oxide layer, and the hydrogen content of the first silicon oxide layer is less than or equal to 4%;
- the buffer layer further comprises a third silicon oxide layer stacked on a side of the second silicon oxide layer away from the substrate, a hydrogen content of the third silicon oxide layer is less than the hydrogen content of the second silicon oxide layer.
Dependencies are inferred from the claim text.