Integrated circuit structures having metal gate cut plug structures

An integrated circuit structure, comprising:

• a fin;
• a gate electrode over the fin;
• a conductive trench contact adjacent to the gate electrode;
• a dielectric sidewall spacer between the gate electrode and the conductive trench contact;
• and
• a dielectric cut plug structure extending through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact, the dielectric cut plug structure, the dielectric cut plug structure comprising silicon and oxygen, with oxygen in direct contact with a metal-containing layer of the gate electrode.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical stack of horizontal nanowires or a fin;
• a gate electrode over the vertical stack of horizontal nanowires or the fin;
• a conductive trench contact adjacent to the gate electrode;
• a dielectric sidewall spacer between the gate electrode and the conductive trench contact;
• and
• a dielectric cut plug structure extending through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact, the dielectric cut plug structure comprising silicon and oxygen, with oxygen in direct contact with a metal-containing layer of the gate electrode.