Integrated circuit structures having partitioned source or drain contact structures

An integrated circuit structure, comprising:

• a nanowire;
• a gate stack around the nanowire;
• a first epitaxial source or drain structure at a first end of the nanowire;
• a second epitaxial source or drain structure at a second end of the nanowire;
• a conductive contact structure coupled to one of the first or the second epitaxial source or drain structures, the conductive contact structure having a first portion above a second portion with an interface between the first portion and the second portion, wherein the interface is at a same level as a bottommost surface of the one of the first or the second epitaxial source or drain structures.

An integrated circuit structure, comprising:

• a vertical arrangement of nanowires above a fin;
• a gate stack around the vertical arrangement of nanowires;
• a first epitaxial source or drain structure at a first end of the vertical arrangement of nanowires;
• a second epitaxial source or drain structure at a second end of the vertical arrangement of nanowires;
• a conductive contact structure coupled to one of the first or the second epitaxial source or drain structures, the conductive contact structure having a first portion above a second portion with an interface between the first portion and the second portion, wherein the interface is at a same level as a bottommost surface of the one of the first or the second epitaxial source or drain structures.