Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakeyoshi NISHIMURA
Life of this patent
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AssigneeFuji Electric Co., Ltd.
InventorTakeyoshi NISHIMURA
Estimating the term…
A semiconductor device including an active area and a voltage blocking area provided outwardly from the active area, the semiconductor device including: a semiconductor layer having a first conductivity type and provided over the active area and the voltage blocking area; a semiconductor region having a second conductivity type and provided on a top surface side of the semiconductor layer, in an edge section on the voltage blocking area side of the active area; and a contact section provided on a top surface side of the semiconductor region, wherein the contact section includes: a first stripe portion extending in a first direction along the edge section on the voltage blocking area side of the active area in a plan view; and a plurality of first connecting portions connected to the first stripe portion and separated from each other in the first direction.
A semiconductor device including an active area and a voltage blocking area provided outwardly from the active area, the semiconductor device comprising:
Dependencies are inferred from the claim text.