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US 2025/0159922 A1Published application
Semiconductor device including multiple spacers and method for preparing the same
AssigneeNanya Technology Corporation
InventorCHIH-WEI HUANG
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Abstract
A semiconductor device and a method for preparing the semiconductor structure are provided. The semiconductor device includes a substrate; a gate electrode disposed on the substrate; a first metal contact disposed in the gate electrode; a first spacer disposed on a sidewall of the gate electrode; and a second spacer covering the first spacer; wherein the first spacer includes dopants.
Claims18
A semiconductor device, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a first metal contact disposed in the gate electrode;
- a first spacer disposed on a sidewall of the gate electrode;
- and
- a second spacer covering the first spacer,
- wherein the first spacer comprises dopants.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a first metal contact disposed in the gate electrode;
- a first spacer disposed on a sidewall of the gate electrode;
- and
- a trench capacitor disposed over the first metal contact and being in contact with the first metal contact.
3 more elements
Dependencies are inferred from the claim text.