Semiconductor device with a main device region and a current sensor region

A semiconductor device, comprising:

• a semiconductor substrate;
• a main device region, comprising:
• a plurality of main device cell regions confined by gate trenches arranged at a first main surface of the semiconductor substrate, wherein gate electrodes are arranged in the gate trenches;
• a current sensor region, comprising:
• a plurality of current sensor cell regions confined by gate trenches arranged at the first main surface of the semiconductor substrate, wherein gate electrodes are arranged in the gate trenches;
• and
• an interface region arranged between the main device region and the current sensor
• region, the interface region comprising:
• a shielding region of a second conductivity type arranged at the first main surface of the semiconductor substrate and covering at least partly a bottom of one of the gate trenches confining one of the plurality of main device cell regions or one of the plurality of current sensor cell regions;
• a further region of the second conductivity type arranged at the first main surface of the semiconductor substrate;
• and
• a gap region of a first conductivity type arranged at the first main surface of the semiconductor substrate, wherein the gap region separates the shielding region from the further region.