Apparatus including bottom electrodes comprising oxygen-doped titanium nitride materials and related electronic devices and methods of forming the electronic devices

An electronic device, comprising:

• one or more capacitors comprising:
• a bottom electrode comprising an oxygen-doped titanium nitride material surrounding an undoped titanium nitride material, the oxygen-doped titanium nitride material comprising from about 20 atomic percent (at. %) to about 60 at. % oxygen and the undoped titanium nitride material directly contacting the oxygen-doped titanium nitride material;
• a high-k dielectric material adjacent to the oxygen-doped titanium nitride material;
• and
• a top electrode adjacent to the high-k dielectric material.

A method of forming an electronic device, comprising:

• forming an oxygen-doped titanium nitride material in capacitor openings in a stack of one or more dielectric materials;
• forming one or more bottom electrode materials in the capacitor openings and adjacent to the oxygen-doped titanium nitride material;
• removing one or more dielectric materials of the stack to expose the oxygen-doped titanium nitride material;
• forming a high-k dielectric material on the oxygen-doped titanium nitride material;
• and
• forming a top electrode on the high-k dielectric material.