Memory device with a split pillar architecture

A method, comprising:

• forming a trench through a first dielectric layer, a first conductive layer, and a second dielectric layer, the trench exposing a substrate;
• depositing an insulative material into the trench;
• forming a first opening by etching a portion of the insulative material;
• depositing, into the first opening, a storage element material over the first conductive layer;
• depositing, into the first opening, a conductive material to form a pillar that contacts the storage element material and contacts the substrate;
• and
• forming a second opening through the storage element material and the conductive material to divide the storage element material into a first storage element and a second storage element and divide the pillar into a first pillar and a second pillar.

A method, comprising:

• performing a first etching process to etch a portion of an insulative material within a trench extending through a plurality of layers, the first etching process forming a plurality of openings that expose a conformal material;
• performing a second etching process to etch a portion of the conformal material, the second etching process forming a plurality of recesses in one or more layers of the plurality of layers of the trench;
• depositing, into the plurality of recesses, a storage element material;
• depositing, into the plurality of openings, a conductive material to form a plurality of pillars that contacts the storage element material;
• and
• performing one or more third etching processes to divide the storage element material into a first plurality of storage elements and a second plurality of storage elements and to divide the plurality of pillars into a first plurality of pillars and a second plurality of pillars.

A product formed by a process, comprising:

• forming a trench through a first dielectric layer, a first conductive layer, and a second dielectric layer, the trench exposing a substrate;
• depositing an insulative material into the trench;
• forming a first opening by etching a portion of the insulative material;
• depositing, into the first opening, a storage element material over the first conductive layer and a conductive material to form a pillar that contacts the storage element material and contacts the substrate;
• and
• forming a second opening through the storage element material and the conductive material to divide the storage element material into a first storage element and a second storage element and divide the pillar into a first pillar and a second pillar.