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US 2025/0159909 A1Published application
Memory device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHengyuan Lee, Xinyu BAO
Life of this patent
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Abstract
Provided are a memory device and a method of forming the same. The memory device includes a substrate, a stack structure, a bit line, and a selector layer. The stack structure is disposed over a substrate. The stack structure at least includes a data storage layer vertically sandwiched between a word line and a metal layer. The bit line penetrates through the stack structure. The selector layer laterally surrounds a sidewall of the bit line and contacts the metal layer.
Claims20
A memory device, comprising:
- a stack structure disposed over a substrate, wherein the stack structure at least comprises a data storage layer vertically sandwiched between a word line and a metal layer;
- a bit line penetrating through the stack structure;
- and
- a selector layer laterally surrounding a sidewall of the bit line and contacting the metal layer.
1 more element
A method of forming a memory device, comprising:
- forming a stack structure over a substrate, wherein the stack structure sequentially comprises:
- a first dielectric layer, a data storage layer, a conductive layer, and a second dielectric layer;
- forming an opening in the stack structure to expose sidewalls of the first dielectric layer, the data storage layer, the conductive layer, and the second dielectric layer;
- laterally etching the sidewall of the conductive layer to form a first recess among the conductive layer, the data storage layer, and the second dielectric layer;
- forming a third dielectric layer in the first recess;
- laterally etching the sidewall of the first dielectric layer to form a second recess between the first dielectric layer and the data storage layer;
- forming a metal layer in the second recess;
- and
- forming a conductive pillar and a selector layer laterally surrounding a sidewall of the conductive pillar in the opening.
6 more elements
A memory device, comprising:
- a stack structure disposed over a substrate, wherein the stack structure at least comprises:
- a variable resistive structure comprising a variable resistive layer and a contact layer;
- and
- a word line structure disposed on the variable resistive structure;
- a bit line penetrating through the stack structure;
- and
- a selector layer laterally surrounding a sidewall of the bit line and contacting the contact layer.
4 more elements
Dependencies are inferred from the claim text.