Oxide semiconductor-based memory device and method of manufacturing same

An oxide semiconductor-based memory device, comprising:

• an insulating layer formed on a gate electrode;
• an oxide semiconductor thin film formed on the insulating layer;
• and
• an oxygen-vacancy-inducing layer located between the insulating layer and the oxide semiconductor thin film and involved in the formation of oxygen vacancies by combining with oxygen of the oxide semiconductor thin film,
• wherein the memory device responds to an optical signal through a defect site caused by the oxygen vacancies, and responds to an electrical signal by trapping/detrapping electrons through the oxygen vacancies.