Electronic device
AssigneeSTMicroelectronics International N.V.
InventorsAlain OSTROVSKY, Jerome DUBOIS, Latifa DESVOIVRES, Simon JEANNOT, Christian BOCCACCIO
Life of this patent
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Abstract
A method manufactures a memory including at least one first phase-change memory cell, each first cell including a resistive element, a first metal layer, and a second layer made of a phase-change material, the first layer being located between the resistive element and the second layer. The method includes the forming of a level including the resistive element, the forming of a third metal layer on the level, the etching of the third layer, and then the forming of the second layer.
Claims20
A method, comprising:
- forming a first level including a resistive element of a first phase-change memory cell;
- forming a metal layer on the first level;
- forming, from the metal layer, a conductive element of the first phase-change memory cell on the resistive element by etching the metal layer;
- and
- forming a layer of phase-change material on the first level and covering a sidewall and a top surface of the conductive element.
A method, comprising:
- forming a plurality of resistive elements in a first insulating layer and each having a top surface substantially coplanar with a top surface of the first insulating layer;
- forming a plurality of conductive elements each in contact with the top surface of a respective resistive element and the top surface of the insulating layer;
- and
- forming a layer of phase change material on the top surface of the insulating layer, on a sidewall of each conductive element, and on the top surface of each conductive element, wherein each of a plurality of first phase-change memory cells includes a respective resistive element, a respective conductive element, and a respective portion of the layer of phase-change material.
A device, comprising a layer of insulating material and a phase-change memory cell, the phase-change memory cell including:
- a metal contact;
- a resistive element in the layer of insulating material and on a top surface of the metal contact;
- a conductive element in contact with a top surface of the resistive element and the layer of insulating material;
- a layer of phase-change material on a top surface of the layer of insulating material, on a side surface of the conductive element, and on a top surface of the conductive element.
Dependencies are inferred from the claim text.