Semiconductor device

A semiconductor device comprising:

• a first transistor, a second transistor, and a capacitor,
• wherein the first transistor comprises a first insulator, a first metal oxide over the first insulator, a second insulator over the first metal oxide, a first conductor over the second insulator, a second conductor covering part of a top surface and part of a side surface of the first metal oxide, and a third conductor covering part of the top surface and part of the side surface of the first metal oxide,
• wherein the second transistor comprises the first insulator, the first metal oxide over the first insulator, a third insulator over the first metal oxide, a fourth conductor over the third insulator, the third conductor, and a fifth conductor covering part of the top surface and part of the side surface of the first metal oxide,
• wherein the third conductor is shared by the first transistor and the second transistor,
• wherein the first metal oxide is shared by the first transistor and the second transistor,
• wherein the first metal oxide comprises a channel formation region of the first transistor and a channel formation region of the second transistor,
• wherein the first insulator comprises a region overlapping with the first metal oxide,
• wherein the capacitor comprises a sixth conductor, a seventh conductor, and a material configured to have ferroelectricity between the sixth conductor and the seventh conductor, and
• wherein the first conductor and the sixth conductor are electrically connected to each other.