Devices including a slot structure extending through a stack structure, and related memory devices

A memory device, comprising:

• tiers vertically stacked relative to one another and respectively including conductive material and insulative material vertically adjacent to the conductive material;
• and
• a filled slot vertically extending through at least some of the tiers and comprising:
• a laterally central region having horizontal boundaries defined by sidewalls of the insulative material of respective ones of the tiers;
• laterally protruding regions continuous with the laterally central region and individually at a vertical elevation of the conductive material of a respective one of the tiers, the laterally protruding regions respectively having additional horizontal boundaries outwardly horizontally offset from the horizontal boundaries of the laterally central region;
• and
• dielectric material partially filling the laterally central region and substantially completely filling the laterally protruding regions.

A non-volatile memory device, comprising:

• a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures;
• and
• a slot filled, in part, with dielectric material and vertically extending through the stack structure, the slot comprising:
• first regions individually vertically overlapping a respective one of the insulative structures;
• and
• second regions continuous with the first regions and individually vertically overlapping a respective one of the conductive structures, each of the second regions having a relatively greater horizontal width than each of the first regions.