Semiconductor device and fabrication method thereof, memory system

A method of fabricating a semiconductor device, comprising:

• forming a first semiconductor structure on a substrate, wherein the first semiconductor structure comprises a first peripheral circuit comprising at least one of a driving structure and a sensing structure;
• and
• forming a second semiconductor structure in direct contact with the first semiconductor structure on the first semiconductor structure, wherein the second semiconductor structure comprises a plurality of memory cells connected with the first peripheral circuit,
• wherein in a plane parallel to the substrate, the first peripheral circuit is located directly below the plurality of memory cells.

A semiconductor device, comprising:

• a first semiconductor structure;
• and
• semiconductor bodies disposed on a side of the first semiconductor structure in a first direction, wherein:
• each of the semiconductor bodies comprises a first section and a second section connected with each other, wherein the first section extends in the first direction, the second section extends in a direction perpendicular to the first direction and directly contacts the first semiconductor structure.