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US 2025/0158587 A1Published application
Method of fabricating acoustic wave device including ion implanted piezoelectric layer
AssigneeSkyworks Global Pte. Ltd.
InventorsKwang Jae Shin, Stefan Bader, Alexandre Augusto Shirakawa, Martha Kennedy Small, Michael David Hill
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Abstract
The disclosed technology relates to a method of fabricating an acoustic wave device including providing a piezoelectric layer for forming the acoustic wave device, selectively implanting ions into localized regions of the piezoelectric layer, and further processing to configure the acoustic wave device to generate an acoustic wave.
Claims20
A method of fabricating an acoustic wave device, the method comprising:
- providing a piezoelectric layer for forming the acoustic wave device;
- selectively implanting ions into localized regions of the piezoelectric layer;
- and
- further processing to configure the acoustic wave device to generate an acoustic wave.
1 more element
A method of fabricating one or more acoustic wave devices, the method comprising:
- providing a plurality of piezoelectric layers laterally arranged over a common substrate;
- implanting different ones of the piezoelectric layers differently;
- and
- further processing to form the one or more acoustic wave devices configured to generate an acoustic wave.
1 more element
Dependencies are inferred from the claim text.