Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Ming Chen, Yung-Chi Lin
Life of this patent
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Abstract
A wafer on wafer on wafer and a chip on wafer on wafer structure and methods of forming the same are provided. In accordance with some embodiments, a first device wafer is bonded to a first carrier through wafer-on-wafer bonding and additional device wafers may subsequently be bonded to the first device wafer. A support wafer is then bonded to the top most device wafer and the first wafer may then be removed. The bonded wafer structure may then be singulated into individual semiconductor device packages. Through the wafer-on-wafer bonding process, the manufacturing cost and cycle time may be reduced.
Claims20
A method comprising:
- bonding a first device wafer to a first support wafer;
- bonding a second device wafer to the first device wafer;
- after the bonding the second device wafer to the first device wafer bonding a second support wafer to the second device wafer, wherein the second support wafer has a larger area in a top down view than both the first device wafer and the second device wafer;
- and
- performing a singulation process on the first device wafer, the second device wafer, and the second support wafer forming a singulated semiconductor package.
A method comprising:
- utilizing a first bond layer of a first wafer to bond a plurality of device dies to the first wafer;
- depositing an insulating material over the first wafer, wherein the insulating material surrounds each of the plurality of device dies and encapsulates the first wafer;
- forming a second bond layer over exposed surfaces of the plurality of device dies and over the insulating material;
- bonding a first device wafer to the second bond layer opposite the plurality of device dies;
- after the bonding the first device wafer to the second bond layer, performing a first edge trimming process on the first device wafer, the insulating material, and the first wafer;
- and
- performing a singulation process through the first device wafer and through the insulating material between each of the plurality of device dies.
A method of manufacturing a semiconductor device comprising:
- bonding a first device wafer to a first carrier wafer, the first device wafer having a first area in a top down view;
- bonding a second device wafer to the first device wafer opposite the first carrier wafer, the second device wafer having the first area in the top down view;
- bonding a third device wafer to the second device wafer opposite the first device wafer, the third device wafer having the first area in the top down view;
- performing an edge trimming process, wherein after the edge trimming process a recess of the first carrier wafer has sidewalls that are coplanar with sidewalls of the first device wafer, the second device wafer, and the third device wafer;
- after performing the edge trimming process, bonding a second carrier wafer to the third device wafer opposite the second device wafer;
- and
- after the bonding the second carrier wafer, removing the first carrier wafer.
Dependencies are inferred from the claim text.