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AssigneesASM IP Holding B.V., Imec Vzw
InventorsDebanjan Jana, Yiting Sun, David De Roest, Daniele Piumi, Sara Paolillo, Philippe Bezard, Vincent Renaud
Estimating the term…
A method for forming an intermediate in the multiple patterning lithographic formation of a semiconductor device mask involves: 1) Providing a target layer; 2) Using EUV lithography to form mandrels on the target layer, with a pitch of less than 40 nm; 3) Depositing a conformal spacer material on the mandrels, narrowing the gaps between them; 4) Performing a directional etch to expose the top surface of the mandrels. The spacer material has a resistivity lower than 104 Ω·cm at 20° C.
A method using EUV lithography for forming an intermediate (1) in the multiple patterning lithographic formation of a mask (2) for patterning a target layer (3) during the fabrication of a semiconductor device, comprising:
An intermediate (1) in the multiple patterning lithographic formation of a mask (2) for patterning a target layer (3) during the fabrication of a semiconductor device, comprising:
Dependencies are inferred from the claim text.