Semiconductor devices comprising steps and related methods

A semiconductor device, comprising:

• a staircase structure comprising tiers of alternating conductive materials and dielectric materials, the tiers comprising:
• opposing steps extending substantially continuously from an upper surface of the tiers to a lower surface of the tiers;
• and
• additional opposing steps extending along only a portion of the tiers between the upper surface and the lower surface, the additional opposing steps defining a stack opening in the tiers, the stack opening including a fill material between opposing sidewalls of the additional opposing steps, and the additional opposing steps distinct from the opposing steps in the tiers.

A method of forming a semiconductor device, comprising:

• forming a stack of materials comprising one or more materials;
• removing a portion of the one or more materials to form a stack opening and one or more opposing steps along a portion of the stack of materials;
• removing another portion of the one or more materials to extend a depth of the stack opening and to form additional opposing steps along the portion of the stack of materials, the one or more opposing steps and the additional opposing steps extending along only the portion of the stack of materials;
• and
• filling the stack opening with a fill material.