Method for producing a power semiconductor component having contact metallization, edge passivation, and power semiconductor component

A method for producing a power semiconductor component in a wafer composite, comprising the following production steps:

• a) providing a semiconductor body (1) having a first doping and a front side (10) and a rear side (12);
• b) forming a central trough region (2) in the semiconductor body (1) having a second doping from the front side (10);
• c) forming an edge structure (3) of second doping, surrounding the central trough region (2) in a ring shape, from the front side (10) and in an edge area (14) of the power semiconductor component, wherein the edge area (14) directly adjoins the trough region (2);
• d) forming a first silicon oxide layer (4) in the edge area (14), wherein an outer section (20) of the central rough region (2) is also overlapped;
• e) applying an aluminium alloy (50), comprising aluminium and at least one further metal or metalloid;
• and
• f) applying a passivation (8), preferably a polyimide passivation (80), to the outer section (20) of the trough region (2) and to the edge area (14).