Structures including trench capacitors and methods of forming the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorANTHONY JEREMY VILLALON
Life of this patent
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Abstract
A structure including a first chip and a second chip stacked over and bonded to the first chip at a bonding interface is provided. The first and second chips form a device stack. The first chip includes a first dielectric and first interconnects arranged in the first dielectric. The second chip includes a second dielectric over the first dielectric and second interconnects arranged in the second dielectric. A trench capacitor is arranged in the device stack. The trench capacitor extends through the second chip, the bonding interface and at least partially into the first chip.
Claims20
A structure, comprising:
- a first chip including a first dielectric and first interconnects arranged in the first dielectric;
- a second chip stacked over and bonded to the first chip at a bonding interface to form a device stack, the second chip including a second dielectric over the first dielectric and second interconnects arranged in the second dielectric;
- and
- a trench capacitor arranged in the device stack, wherein the trench capacitor extends through the second chip, the bonding interface and at least partially into the first chip.
A structure, comprising:
- a first chip including a first dielectric over a first active layer and first interconnects arranged in the first dielectric;
- a second chip stacked over the first chip to form a device stack, the second chip including a second dielectric over the first dielectric, and a second active layer over the second dielectric, wherein second interconnects are arranged in the second dielectric;
- and
- a trench capacitor extending from a top side of the device stack through the second dielectric of the second chip and at least partially into the first dielectric of the first chip.
A method of forming a structure, comprising:
- forming a first chip including a first dielectric and first interconnects arranged in the first dielectric and a second chip including a second dielectric and second interconnects arranged in the second dielectric;
- stacking the second chip over the first chip with the second dielectric facing the first dielectric to form a device stack;
- bonding the first chip and the second chip together;
- and
- forming a trench capacitor in the device stack, wherein the trench capacitor extends through the second chip and at least partially into the first chip.
Dependencies are inferred from the claim text.