Semiconductor package including a conductive pillar

A semiconductor package comprising:

• a first redistribution structure including an upper surface, a lower surface opposite to the upper surface, and a first upper pad disposed at the upper surface;
• a second redistribution structure arranged on the first redistribution structure;
• a first conductive pillar spaced apart from the second redistribution structure and on the first upper pad of the first redistribution structure;
• a plurality of solder balls arranged between the first upper pad and the first conductive pillar;
• a first chip arranged on the second redistribution structure;
• a first molding member covering the first chip and disposed on the second redistribution structure;
• a third redistribution structure arranged on the first molding member;
• a second chip arranged on the third redistribution structure;
• a second molding member covering the first conductive pillar and the first molding member;
• and
• a fourth redistribution structure arranged on the second molding member.

A semiconductor package comprising:

• a first redistribution structure including an upper surface, a lower surface opposite to the upper surface, and a first upper pad disposed in the first redistribution structure;
• a second redistribution structure arranged on the first redistribution structure;
• a first bump arranged between the first redistribution structure and the second redistribution structure;
• a first conductive pillar spaced apart from the second redistribution structure and on the first upper pad of the first redistribution structure;
• a first film covering a lower surface and a lateral surface of the first conductive pillar;
• a first chip arranged on the second redistribution structure;
• a second conductive pillar arranged spaced apart from the first chip and disposed on the second redistribution structure;
• a first molding member covering the first chip and the second conductive pillar and disposed on the second redistribution structure;
• a third redistribution structure arranged on the first molding member;
• a second chip arranged on the third redistribution structure and having a size greater than a size of the first chip;
• a second molding member covering the first conductive pillar and the first molding member;
• and
• a fourth redistribution structure arranged on the second molding member, wherein a thickness of the first film is in a range from about 1 μm to about 3 μm, a melting point of the first film is lower than a melting point of the first conductive pillar, and
• an aspect ratio of the first conductive pillar is in a range from 1:2 to 1:5.