Symmetrical Process Reactor
OwnerStephan Wegeinventor
Life of this patent
Estimating the term…
Abstract
A process reactor (10) for plasma etching with atomic precision (ALE) of a substrate (12) to be processed and/or for plasma assisted deposition of atomic layers on the substrate (12) includes a reaction chamber (16) in which a table (18) and/or a holder for the substrate (12) is provided. By means of a gas supply (31), the substrate (12) is uniformly covered with gas in the reaction chamber (12). A pump (60) is used to evacuate the reaction chamber (16). A plasma generator (46) for generating a plasma (10) in the reaction chamber (16) are also provided.
Claims12
-11. (canceled)
A process reactor (10) for plasma etching with atomic precision of a substrate (12) to be processed and/or for plasma assisted deposition of atomic layers on the substrate (12), comprising:
- a reaction chamber (16);
- a table (18) and/or a holder for the substrate (12) in the reaction chamber (16);
- a gas supply (31) which uniformly covers the substrate (12) with gas in the reaction chamber (12);
- a pump (60) for evacuating the reaction chamber (16);
- and
- a plasma generator (46) for generating a plasma in the reaction chamber (16),
- wherein the reaction chamber (16) is rotationally symmetrical, with the pump (60) being centrally symmetrically arranged below the table (18) and/or the holder in the reaction chamber (16).
Dependencies are inferred from the claim text.