Memory storage device and reading method thereof
AssigneeWinbond Electronics Corp.
InventorWen-Chiao Ho
Life of this patent
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Abstract
A memory storage device including a memory array and a sensing amplifier circuit is provided. The memory array includes a memory cell and a reference cell. During an erase phase, the memory cell and the reference cell are erased together. The sensing amplifier circuit is coupled to the memory array. During a reading phase, the sensing amplifier circuit compares a cell current of the memory cell with a reference current of the programmed reference cell to determine a state of the memory cell. In addition, a reading method for a memory storage device is also provided.
Claims18
A memory storage device, comprising:
- a memory array, comprises a memory cell and a reference cell, wherein the memory cell and the reference cell are erased together during an erase phase;
- and
- a sensing amplifier circuit, coupled to the memory array, and the sensing amplifier circuit compares a cell current of the memory cell with a reference current of the programmed reference cell to determine a state of the memory cell during a reading phase.
A reading method for a memory storage device, wherein the memory storage device comprises a memory array, and the memory array comprises a memory cell and a reference cell, the reading method comprises:
- during an erase phase, performing an erase operation on the memory cell and the reference cell;
- performing a programming operation on the reference cell;
- and
- during a reading phase, comparing a cell current of the memory cell with a reference current of the programmed reference cell to determine a state of the memory cell.
Dependencies are inferred from the claim text.