Driving method of semiconductor device

Abstract

Provided is a semiconductor device capable of retaining data for a long time. The semiconductor device includes a cell provided with a capacitor, a first transistor, and a second transistor; the capacitor includes a first electrode, a second electrode, and a ferroelectric layer; the ferroelectric layer is provided between the first electrode and the second electrode and polarization reversal occurs by application of a first saturated polarization voltage or a second saturated polarization voltage whose polarity is different from that of the first saturated polarization voltage; and the first electrode, one of a source and a drain of the first transistor, and a gate of the second transistor are electrically connected to one another. In a first period, the first saturated polarization voltage is applied to the ferroelectric layer. In a second period, a voltage having a value between the first saturated polarization voltage and the second saturated polarization voltage is applied to the ferroelectric layer as a data voltage.

Dependencies are inferred from the claim text.