Magnetic memory device

A magnetic memory device, comprising:

• a substrate;
• a first dielectric pattern on the substrate;
• and
• a plurality of vertical structures that penetrate the first dielectric pattern,
• wherein the vertical structures are spaced apart from each other in a first direction and a second direction that are parallel to a top surface of the substrate and intersect each other,
• wherein each of the vertical structures includes:
• a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern;
• a first magnetic pattern between the first dielectric pattern and the dielectric pillar, the first magnetic pattern including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part;
• a second magnetic pattern on the first dielectric pattern, the second magnetic pattern surrounding a lateral surface of the second part;
• and
• a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern, and
• wherein each of the first magnetic patterns extends in a third direction perpendicular to the top surface of the substrate.

A magnetic memory device, comprising:

• a substrate including a first wiring layer that extends in a second direction;
• a first dielectric pattern on the substrate;
• a dielectric pillar on the first wiring layer, the dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern;
• a first magnetic pattern between the first dielectric pattern and the dielectric pillar on the first wiring layer, the first magnetic pattern including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part;
• a second magnetic pattern on the first dielectric pattern, the second magnetic pattern surrounding a lateral surface of the second part;
• a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern;
• a second dielectric pattern on the first dielectric pattern, the second dielectric pattern surrounding a lower lateral surface of the second magnetic pattern on the first dielectric pattern;
• a second wiring layer on the second dielectric pattern, the second wiring layer surrounding an upper lateral surface of the second magnetic pattern;
• and
• an upper dielectric pattern that covers a top surface of the tunnel barrier pattern, a top surface of the second magnetic pattern, and a top surface of the second wiring layer,
• wherein the first magnetic pattern extends in a vertical direction perpendicular to a top surface of the substrate.